IHW20N120R3 (H20R1203), Транзистор 1200V 40A 310W [TO247-3]

Артикул: IHW20N120R3 (H20R1203)
PartNumber: IHW20N120R3FKSA1
Ном. номер: 9000222251
Производитель: Infineon Technologies
Фото 1/3 IHW20N120R3 (H20R1203), Транзистор 1200V 40A 310W [TO247-3]
Фото 2/3 IHW20N120R3 (H20R1203), Транзистор 1200V 40A 310W [TO247-3]Фото 3/3 IHW20N120R3 (H20R1203), Транзистор 1200V 40A 310W [TO247-3]
Есть в наличии более 50 шт. Отгрузка со склада в г.Москва со склада.
Возможна срочная доставка завтра
220 руб. × = 220 руб.
от 5 шт. — 160 руб.
от 50 шт. — 145 руб.
Цена и наличие в магазинах

Описание

IGBT Discretes, Infineon
Infineon range of discrete IGBT's offer different technologies such as NPT, N-Channel TRENCHSTOP TM and Fieldstop. They can be used in many applications that may require hard switching and soft switching. This includes Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices may have an anti-parallel diode or with maybe a monolithically integrated diode.

IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Техническая документация

Дополнительная информация

Datasheet IHW20N120R3 (H20R1203) IHW20N120R3FKSA1
IHW20N120R3 Reverse conducting IGBT with monolithic body diode IHW20N120R3 (H20R1203) IHW20N120R3FKSA1
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов