IKW30N60H3 (K30H603), Транзистор 600V 60A 187W [TO-247-3]

Артикул: IKW30N60H3 (K30H603)
PartNumber: IKW30N60H3FKSA1
Ном. номер: 9000263287
Производитель: Infineon Technologies
Фото 1/4 IKW30N60H3 (K30H603), Транзистор 600V 60A 187W [TO-247-3]
Фото 2/4 IKW30N60H3 (K30H603), Транзистор 600V 60A 187W [TO-247-3]Фото 3/4 IKW30N60H3 (K30H603), Транзистор 600V 60A 187W [TO-247-3]Фото 4/4 IKW30N60H3 (K30H603), Транзистор 600V 60A 187W [TO-247-3]
Есть в наличии 30 шт. Отгрузка со склада в г.Москва 3 рабочих дня.
150 руб. × = 150 руб.
от 25 шт. — 94 руб.
от 250 шт. — по запросу
Цена и наличие в магазинах Есть аналоги


The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

• Low switching losses for high efficiency
• Fast switching behaviour with low EMI emissions
• Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
• Short circuit capability
• Excellent performance
• Low switching and conduction losses

Техническая документация

Дополнительная информация

Datasheet IKW30N60H3 (K30H603) IKW30N60H3FKSA1
IKW30N60H3 IGBT w soft fast-recovery Diode IKW30N60H3 (K30H603) IKW30N60H3FKSA1
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов