IKW40T120FKSA1, Биполярный транзистор IGBT, 1200 В, 40 А, 270 Вт
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см. техническую документацию
см. техническую документацию
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Описание
Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы
Биполярный транзистор IGBT, 1200 В, 40 А, 270 Вт
Технические параметры
| Корпус | PG-TO247-3-46 | |
| Base Product Number | IKW40T120 -> | |
| Current - Collector (Ic) (Max) | 75A | |
| Current - Collector Pulsed (Icm) | 105A | |
| ECCN | EAR99 | |
| Gate Charge | 203nC | |
| HTSUS | 8541.29.0095 | |
| IGBT Type | NPT, Trench Field Stop | |
| Input Type | Standard | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Through Hole | |
| Operating Temperature | -40В°C ~ 150В°C (TJ) | |
| Package | Tube | |
| Package / Case | TO-247-3 | |
| Power - Max | 270W | |
| REACH Status | REACH Unaffected | |
| Reverse Recovery Time (trr) | 240ns | |
| RoHS Status | ROHS3 Compliant | |
| Series | TrenchStopВ® -> | |
| Supplier Device Package | PG-TO247-3 | |
| Switching Energy | 6.5mJ | |
| Td (on/off) @ 25В°C | 48ns/480ns | |
| Test Condition | 600V, 40A, 15Ohm, 15V | |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A | |
| Voltage - Collector Emitter Breakdown (Max) | 1200V | |
| Brand | Infineon Technologies | |
| Collector- Emitter Voltage VCEO Max | 1200 V | |
| Collector-Emitter Saturation Voltage | 2.3 V | |
| Configuration | Single | |
| Continuous Collector Current at 25 C | 75 A | |
| Continuous Collector Current Ic Max | 40 A | |
| Factory Pack Quantity | 240 | |
| Gate-Emitter Leakage Current | 600 nA | |
| Manufacturer | Infineon | |
| Maximum Gate Emitter Voltage | 20 V | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -40 C | |
| Mounting Style | Through Hole | |
| Packaging | Tube | |
| Part # Aliases | IKW40T120 IKW40T120XK SP000013940 | |
| Pd - Power Dissipation | 270 W | |
| Product Category | IGBT Transistors | |
| RoHS | Details | |
| Technology | Si | |
| Case | PG-TO247-3 | |
| Collector current | 40A | |
| Collector-emitter voltage | 1.2kV | |
| Features of semiconductor devices | integrated anti-parallel diode | |
| Gate-emitter voltage | ±20V | |
| Kind of package | tube | |
| Mounting | THT | |
| Power dissipation | 270W | |
| Pulsed collector current | 105A | |
| Semiconductor structure | single transistor | |
| Turn-off time | 700ns | |
| Turn-on time | 92ns | |
| Type of transistor | IGBT | |
| Вес, г | 8.5 |
Техническая документация
Datasheet
pdf, 515 КБ
Datasheet IKW40T120FKSA1
pdf, 510 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
