IKW50N60H3 (K50H603), Транзистор, IGBT, Trench and Fieldstop, N-канал, 600В, 50А, [TO-247]
|250 руб.||×||=||250 руб.|
Infineon range of discrete IGBT's offer different technologies such as NPT, N-Channel TRENCHSTOP TM and Fieldstop. They can be used in many applications that may require hard switching and soft switching. This includes Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices may have an anti-parallel diode or with maybe a monolithically integrated diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Datasheet IKW50N60H3 (K50H603) SP000852244 IKW50N60H3FKSA1
IGBT in Trench and Fieldstop Technology with Soft, Fast Recovery Anti-Parallel Diode IKW50N60H3 (K50H603) SP000852244 IKW50N60H3FKSA1
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов