IMW120R020M1HXKSA1, N-Channel 1200 V 98A (Tc) 375W (Tc) Through Hole PG-TO247-3

The Infineon CoolSiC 1200 V, 20 mΩ SiC MOSFET in TO247-3 package build on a state of the art trench semiconductor process optimized to combine performance with reliability, these includes, the lowest gate charge and device capacitance levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses, and threshold-free on-state characteristic and the CoolSiC MOSFETs are ideal for hard and resonant switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters.