IPG20N06S2L-65, MOSFET N-Ch 55V 20A TDSON-8 OptiMOS
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Номенклатурный номер
9001364812
PartNumber
IPG20N06S2L-65
Brand:
Infineon Technologies
Channel Mode:
Enhancement
Configuration:
Dual
Fall Time:
7 nS
Id - Continuous Drain Current:
20 A
Все параметры
Datasheet
pdf, 160 КБ
Спецпредложение
1 шт. со склада г.Москва
210 руб.
от 5 шт. —
203 руб.
от 50 шт. —
по запросу
1 шт.
на сумму 210 руб.
Плати частями
от 0 руб. × 4 платежа
от 0 руб. × 4 платежа
Альтернативные предложения1
Этот же товар с другими ценами и сроками поставки
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Infineon Technologies IPG20N06 OptiMOS™ Power Transistors and IPG20N04 / IPG20N06 OptiMOS™-T2 Power Transistors are the newest additions to the OptiMOS product line. The Infineon IPG20N06 OptiMOS (55V), IPG20N06 OptiMOS-T2 (60V), and IPG20N04 OptiMOS-T2 (40V) devices are dual N-channel devices in a TDSON-8 package. These Infineon OptiMOS devices have a maximum operating temperature of 175 C. Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications.
Технические параметры
| Brand: | Infineon Technologies |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Fall Time: | 7 nS |
| Id - Continuous Drain Current: | 20 A |
| Manufacturer: | Infineon |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | TDSON-8 |
| Part # Aliases: | IPG2N6S2L65XT SP000613722 IPG20N06S2L65ATMA1 |
| Pd - Power Dissipation: | 43 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 12 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 65 mOhms |
| Rise Time: | 3 nS |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | OptiMOS |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 10 nS |
| Typical Turn-On Delay Time: | 2 nS |
| Vds - Drain-Source Breakdown Voltage: | 55 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.6 V |
| Вес, г | 0.1 |
Техническая документация
Datasheet
pdf, 160 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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