IRF2807SPBF, Транзистор, N-канал 75В 82А [D2PAK]
|60 руб.||×||=||60 руб.|
The IRF2807SPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
• Advanced process technology
• Dynamic dV/dt rating
• Fully avalanche rating