IRF640NPBF, Транзистор, N-канал 200В 18А [TO-220AB]
The IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
• Drain to source voltage Vds is 200V
• Gate to source voltage is ±20V
• On resistance Rds(on) of 150mohm
• Power dissipation Pd of 150W at 25°C
• Continuous drain current Id of 18A at Vgs 10V and 25°C
• Operating junction temperature range from -55°C to 175°C