IRFR3411PBF, Nкан 100В 32А D-Pak
|74 руб.||×||=||74 руб.|
The IRFR3411PBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
• Advanced process technology
• Dynamic dV/dt rating
• Fully avalanche rating
• Low static drain-to-source ON-resistance