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IRFS7530PBF, MOSFET N-CHANNEL HEXFET 60V 295A D2PAK

Ном. номер: 8000005903
PartNumber: IRFS7530PBF
Производитель: Infineon Technologies
IRFS7530PBF, MOSFET N-CHANNEL HEXFET 60V 295A D2PAK
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см. техническую документацию
420 руб.
2132 шт. со склада г.Москва,
срок 1-2 недели
от 20 шт. — 300 руб.
от 100 шт. — 245 руб.
Кратность заказа 4 шт.
Добавить в корзину 4 шт. на сумму 1 680 руб.
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Semiconductors

Технические параметры

Maximum Operating Temperature
+175 °C
Maximum Continuous Drain Current
295 A
Package Type
D2PAK (TO-263)
Maximum Power Dissipation
375 W
Mounting Type
Surface Mount
Width
4.69mm
Forward Transconductance
242s
Height
9.65mm
Dimensions
10.54 x 4.69 x 9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.54mm
Transistor Configuration
Single
Typical Turn-On Delay Time
52 ns
Brand
Infineon
Typical Turn-Off Delay Time
172 ns
Series
HEXFET
Minimum Operating Temperature
-55 °C
Maximum Drain Source Resistance
2.1 mΩ
Maximum Drain Source Voltage
60 V
Pin Count
3
Category
Power MOSFET
Typical Gate Charge @ Vgs
274 nC @ 10 V
Channel Mode
Enhancement
Typical Input Capacitance @ Vds
13703 pF @ 25 V
Channel Type
N
Maximum Gate Source Voltage
-20 V, +20 V
Forward Diode Voltage
1.2V

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