IRFZ34PBF, MOSFET 60V N-CH HEXFET MOSFET

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Номенклатурный номер: 8006255469

Артикул: IRFZ34PBF

N-канал 60V 30A (Tc) 88W (Tc) сквозное отверстие TO-220AB

Base Product Number	IRFZ34 ->
Current - Continuous Drain (Id) @ 25В°C	30A (Tc)
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Other Related Documents	http://www.vishay.com/docs/88869/packaging.pdf
Package	Tube
Package / Case	TO-220-3
Power Dissipation (Max)	88W (Tc)
Rds On (Max) @ Id, Vgs	50mOhm @ 18A, 10V
RoHS Status	ROHS3 Compliant
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Resistance	50 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	88 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	46 nC @ 10 V
Width	4.7mm
Вес, г	2