IRG4BC30KD-SPBF, IGBT 600В 28А [D2Pak]

Артикул: IRG4BC30KD-SPBF
Ном. номер: 281210524
Производитель: International Rectifier
Фото 1/2 IRG4BC30KD-SPBF, IGBT 600В 28А [D2Pak]
Фото 2/2 IRG4BC30KD-SPBF, IGBT 600В 28А [D2Pak]
Есть в наличии более 20 шт. Отгрузка со склада в г.Москва 3 рабочих дня.
190 руб. × = 190 руб.
от 20 шт. — 94 руб.

Описание

Co-Pack IGBT up to 20A, International Rectifier
Isolated Gate Bipolar Transistors (IGBT) from International Semiconductor provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Single IGBT, International Rectifier

Offering switching speeds up to 150kHz, IR's discrete IGBTs are available for hard- and soft-switching applications. This comprehensive range offers reduced power dissipation and improved power density and includes DPAK, D2PAK, TO-220, TO-247, TO-262 and Super TO-247 package options.

Co-Pack IGBT, International Rectifier

IR's range of Co-Pack IGBTs combines the high performance IGBT with ultrafast anti-parallel recovery diodes in a single compact surface mount or though hole package. Co-Pack IGBTs are available for hard- and soft-switching applications with switching speeds as high as 150kHz.

Технические параметры

Структура
Максимальное напряжение кэ ,В
Максимальный ток кэ при 25 гр. С,A
Напряжение насыщения при номинальном токе, В
2.21
Управляющее напряжение,В
6
Мощность макс.,Вт
Крутизна характеристики, S
Температурный диапазон,С
-55…150
Корпус

Техническая документация

IRG4BC30KD-S_Datasheet
pdf, 225 КБ

Дополнительная информация

IRG4BC30KD-SPBF HEXFET Power MOSFET Data Sheet IRG4BC30KD-SPBF
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов