IRG4IBC20WPBF, БТИЗ транзистор, 11.8 А, 2.16 В, 34 Вт, 600 В, TO-220FP, 3 вывод(-ов)
|190 руб.||×||=||190 руб.|
The IRG4IBC20WPBF is an Insulated Gate Bipolar Transistor designed expressly for switch-mode power supply and PFC (power factor correction) applications. The latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability. It features lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz (hard switched mode). Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300kHz).
• Industry-benchmark switching losses improve efficiency of all power supply topologies
• 50% Reduction of Eoff parameter
• Low IGBT conduction losses
• Particular benefit to single-ended converters and boost PFC topologies 150W and higher
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