IRG4PH30KDPBF, 1200В 20А 3.1В [ТО-247АС]
The IRG4PH30KDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The HEXFRED™ diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses.
• Combines low conduction losses with high switching speed
• Tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes
• Latest generation 4 IGBTs offer highest power density motor controls possible