IRG4PH50KPBF, 1200В 45А [TO-247AC]
|430 руб.||×||=||430 руб.|
The IRG4PH50KPBF is an Insulated Gate Bipolar Transistor combines low conduction losses with high switching speed. It feature latest generation design provides tighter parameter distribution and higher efficiency than previous generations. As a freewheeling diode recommend our HEXFRED™ ultrafast, ultra-soft recovery diodes for minimum EMI/noise and switching losses in the diode and IGBT.
• Latest generation 4 IGBT's offer highest power density motor controls possible