IRG4PH50SPBF, IGBT 1200В 57А [TO-247AC]

Артикул: IRG4PH50SPBF
Ном. номер: 2913105180
Производитель: International Rectifier
Фото 1/5 IRG4PH50SPBF, IGBT 1200В 57А [TO-247AC]
Фото 2/5 IRG4PH50SPBF, IGBT 1200В 57А [TO-247AC]Фото 3/5 IRG4PH50SPBF, IGBT 1200В 57А [TO-247AC]Фото 4/5 IRG4PH50SPBF, IGBT 1200В 57А [TO-247AC]Фото 5/5 IRG4PH50SPBF, IGBT 1200В 57А [TO-247AC]
Есть в наличии более 50 шт. Отгрузка со склада в г.Москва 1 рабочий день.
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180 руб. × = 180 руб.
от 5 шт. — 170 руб.
от 50 шт. — 162 руб.
Цена и наличие в магазинах

Описание

Single IGBT over 21A, International Rectifier
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Single IGBT, International Rectifier

Offering switching speeds up to 150kHz, IR's discrete IGBTs are available for hard- and soft-switching applications. This comprehensive range offers reduced power dissipation and improved power density and includes DPAK, D2PAK, TO-220, TO-247, TO-262 and Super TO-247 package options.

Co-Pack IGBT, International Rectifier

IR's range of Co-Pack IGBTs combines the high performance IGBT with ultrafast anti-parallel recovery diodes in a single compact surface mount or though hole package. Co-Pack IGBTs are available for hard- and soft-switching applications with switching speeds as high as 150kHz.

Технические параметры

Структура
Максимальное напряжение кэ ,В
Максимальный ток кэ при 25 гр. С,A
Напряжение насыщения при номинальном токе, В
1.7
Управляющее напряжение,В
6
Мощность макс.,Вт
Крутизна характеристики, S
Температурный диапазон,С
-55…150
Корпус

Техническая документация

IRG4PH50SPBF Datasheet
pdf, 227 КБ

Дополнительная информация

Datasheet IRG4PH50SPBF
Datasheet IRG4PH50SPBF
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов