IRGP4066D-EPBF, Transistor IGBT N-ch 600V

PartNumber: IRGP4066D-EPBF
Ном. номер: 8040791983
Производитель: International Rectifier
IRGP4066D-EPBF, Transistor IGBT N-ch 600V
Доступно на заказ 2 шт. Отгрузка со склада в г.Москва 4-5 недель.
1 110 руб. × = 1 110 руб.


Co-Pack IGBT over 21A, International Rectifier
Isolated Gate Bipolar Transistors (IGBT) from International Semiconductor provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Single IGBT, International Rectifier

Offering switching speeds up to 150kHz, IR's discrete IGBTs are available for hard- and soft-switching applications. This comprehensive range offers reduced power dissipation and improved power density and includes DPAK, D2PAK, TO-220, TO-247, TO-262 and Super TO-247 package options.

Co-Pack IGBT, International Rectifier

IR's range of Co-Pack IGBTs combines the high performance IGBT with ultrafast anti-parallel recovery diodes in a single compact surface mount or though hole package. Co-Pack IGBTs are available for hard- and soft-switching applications with switching speeds as high as 150kHz.


Технические параметры

Channel Type
15.87 x 5.13 x 20.7mm
Maximum Collector Emitter Voltage
600 V
Maximum Continuous Collector Current
140 A
Maximum Gate Emitter Voltage
максимальная рабочая температура
+175 °C
Максимальная рассеиваемая мощность
454 W
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
тип упаковки
Pin Count
Switching Speed

Дополнительная информация

IRGP4066D(-E)PbF Insulated Gate Bipolar Transistor with Diode Data Sheet IRGP4066D-EPBF