IRGPS40B120UDP, Транзистор, IGBT 1200В 40А 5-40кГц [Super-247]

Артикул: IRGPS40B120UDP
Ном. номер: 9060000424
Производитель: International Rectifier
Фото 1/5 IRGPS40B120UDP, Транзистор, IGBT 1200В 40А 5-40кГц [Super-247]
Фото 2/5 IRGPS40B120UDP, Транзистор, IGBT 1200В 40А 5-40кГц [Super-247]Фото 3/5 IRGPS40B120UDP, Транзистор, IGBT 1200В 40А 5-40кГц [Super-247]Фото 4/5 IRGPS40B120UDP, Транзистор, IGBT 1200В 40А 5-40кГц [Super-247]Фото 5/5 IRGPS40B120UDP, Транзистор, IGBT 1200В 40А 5-40кГц [Super-247]
Есть в наличии более 30 шт. Отгрузка со склада в г.Москва
Возможна срочная доставка завтра
690 руб. × = 690 руб.
от 3 шт. — 660 руб.
от 30 шт. — 659 руб.
Цена и наличие в магазинах

Описание

Co-Pack IGBT over 21A, International Rectifier
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT Transistors, International Rectifier
International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

Техническая документация

irgps40b120udp
pdf, 131 КБ

Дополнительная информация

Datasheet IRGPS40B120UDP
Datasheet IRGPS40B120UDP
IRGPS40B120UDP, Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode IRGPS40B120UDP