IRGS14C40LPBF, Транзистор, IGBT 430В 20А [D2PAK]

Артикул: IRGS14C40LPBF
Ном. номер: 2086103185
Производитель: International Rectifier
Фото 1/4 IRGS14C40LPBF, Транзистор, IGBT 430В 20А [D2PAK]
Фото 2/4 IRGS14C40LPBF, Транзистор, IGBT 430В 20А [D2PAK]Фото 3/4 IRGS14C40LPBF, Транзистор, IGBT 430В 20А [D2PAK]Фото 4/4 IRGS14C40LPBF, Транзистор, IGBT 430В 20А [D2PAK]
Есть в наличии более 250 шт. Отгрузка со склада в г.Москва
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85 руб. × = 85 руб.
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Описание

Single IGBT up to 20A, International Rectifier
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Single IGBT, International Rectifier

Offering switching speeds up to 150kHz, IR's discrete IGBTs are available for hard- and soft-switching applications. This comprehensive range offers reduced power dissipation and improved power density and includes DPAK, D2PAK, TO-220, TO-247, TO-262 and Super TO-247 package options.

Co-Pack IGBT, International Rectifier

IR's range of Co-Pack IGBTs combines the high performance IGBT with ultrafast anti-parallel recovery diodes in a single compact surface mount or though hole package. Co-Pack IGBTs are available for hard- and soft-switching applications with switching speeds as high as 150kHz.

Технические параметры

Структура
Максимальное напряжение кэ ,В
Максимальный ток кэ при 25 гр. С,A
Напряжение насыщения при номинальном токе, В
1.2
Управляющее напряжение,В
1.8
Мощность макс.,Вт
Крутизна характеристики, S
Температурный диапазон,С
-40…175
Дополнительные опции
с четырьмя стабилитронами
Корпус

Техническая документация

IRGS14C40L Datasheet
pdf, 160 КБ

Дополнительная информация

Datasheet IRGS14C40LPBF
IRGS14C40LPPbF, IRGSL14C40LPPbF, IRGB14C40LPPbF, Ignition IGBT (IGBT with on-Chip Gate-Emitter and Gate-Collector Clamps) IRGS14C40LPBF