IRL640PBF, Транзистор, N-канал 200В 17А [TO-220AB]
The IRL640PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Logic-level gate drive
• Ease of paralleling
• RDS (ON) Specified at VGS = 4 and 5V
• Simple drive requirements