IRLR3110ZPBF, Транзистор, N-канал 100В 63А [D-PAK]
The IRLR3110ZPBF is a N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This features combines to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications.
• Fully avalanche rated
• Advanced process technology
• Ultra low on resistance
• Fast switching