IRSM836-044MA, Умный модуль питания (IPM), IPM, МОП-транзистор, 250 В, 4 А, 1.5 кВ, PQFN, µIPM
This advanced 4A, 250V Integrated Power Module offers a combination of IR's low Drain to Source ON Resistance Trench MOSFET technology and the industry benchmark 3-phase high voltage, rugged driver in a small PQFN package. At only 12x12mm and featuring integrated bootstrap functionality, the compact footprint of this surface mount package makes it suitable for applications that are space-constrained. Integrated over-current protection, fault reporting and under-voltage lockout functions deliver a high level of protection and fail-safe operation.
• Integrated gate drivers and bootstrap functionality
• Open-source for leg-shunt current sensing
• Protection shutdown pin
• Under-voltage lockout for all channels
• Matched propagation delay for all channels
• Optimized dV/dt for loss and EMI trade offs
• Cross-conduction prevention logic
• Functions without a heat sink.
Полупроводники - Дискретные\Умные Модули Питания