IXFP10N80P, N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

Изображения служат только для ознакомления,
см. техническую документацию

3 450 руб.

от 20 шт. — 2 530 руб.

Добавить в корзину 1 шт. на сумму 3 450 руб.

Номенклатурный номер: 8585580928

Артикул: IXFP10N80P

Semiconductors\Discrete Semiconductors\MOSFETs

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS A wide range of advanced discrete Power MOSFET devices from IXYSundefined

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	10 A
Maximum Drain Source Resistance	1.1 Ω
Maximum Drain Source Voltage	800 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	5.5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	300 W
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Series	HiperFET, Polar
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	40 nC @ 10 V
Width	4.83mm
Вес, г	2