IXFT400N075T2

IXFT400N075T2
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см. техническую документацию
Номенклатурный номер
8053952880
Бренд
Brand:
IXYS
Channel Mode:
Enhancement
Configuration:
Single
Factory Pack Quantity:
30
Fall Time:
44 ns
Id - Continuous Drain Current:
400 A
Все параметры
Datasheet
pdf, 215 КБ
900 шт., срок 8 недель
2 260 руб.
Кратность заказа 300 шт.
300 шт. на сумму 678 000 руб.
Плати частями
от 0 руб. × 4 платежа
Альтернативные предложения1
Этот же товар с другими ценами и сроками поставки
HiPerFET™ Power MOSFETs IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Brand: IXYS
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 30
Fall Time: 44 ns
Forward Transconductance - Min: 80 S
Id - Continuous Drain Current: 400 A
Manufacturer: IXYS
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: D3PAK-3(TO-268-3)
Packaging: Tube
Pd - Power Dissipation: 1 mW
Product Category: MOSFETs
Product Type: MOSFETs
Qg - Gate Charge: 420 nC
Rds On - Drain-Source Resistance: 2.3 mOhms
Rise Time: 20 ns
Subcategory: Transistors
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 67 ns
Typical Turn-On Delay Time: 35 ns
Vds - Drain-Source Breakdown Voltage: 75 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Datasheet
pdf, 215 КБ

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