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IXTH48N65X2, MOSFET MSFT N-CH ULTRA JNCT X2 3&44

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2 930 руб.

от 10 шт. — 2 390 руб.

от 30 шт. — 1 830 руб.

от 120 шт. — 1 585.54 руб.

Добавить в корзину 1 шт. на сумму 2 930 руб.

Номенклатурный номер: 8005506839

Артикул: IXTH48N65X2

Бренд: Ixys Corporation

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

Технические параметры

Brand:	IXYS
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	30
Fall Time:	15 ns
Id - Continuous Drain Current:	48 A
Manufacturer:	IXYS
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	660 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	Power MOSFET Modules
Qg - Gate Charge:	76 nC
Rds On - Drain-Source Resistance:	65 mOhms
Rise Time:	26 ns
Subcategory:	MOSFETs
Technology:	Si
Tradename:	HiPerFET
Transistor Polarity:	N-Channel
Type:	X2-Class
Typical Turn-Off Delay Time:	50 ns
Typical Turn-On Delay Time:	19 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	0.454