KSE13003H2ASTU, 400V 20W 9@0.5A,2V 1.5A NPN TO-126-3 Bipolar BJT ROHS

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Номенклатурный номер

8022396383

Артикул

KSE13003H2ASTU

Бренд

Brand:

onsemi/Fairchild

Collector- Base Voltage VCBO:

700 V

Configuration:

Single

Continuous Collector Current:

1.5 A

DC Current Gain hFE Max:

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240 руб.

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Описание Отзывы

Brand:	onsemi/Fairchild
Collector- Base Voltage VCBO:	700 V
Collector- Emitter Voltage VCEO Max:	400 V
Collector-Emitter Saturation Voltage:	500 mV
Configuration:	Single
Continuous Collector Current:	1.5 A
DC Collector/Base Gain hfe Min:	8
DC Current Gain hFE Max:	40
Emitter- Base Voltage VEBO:	9 V
Factory Pack Quantity: Factory Pack Quantity:	1920
Gain Bandwidth Product fT:	4 MHz
Manufacturer:	onsemi
Maximum DC Collector Current:	1.5 A
Maximum Operating Temperature:	+150 C
Mounting Style:	Through Hole
Package / Case:	TO-126-3
Packaging:	Tube
Part # Aliases:	KSE13003H2ASTU_NL
Pd - Power Dissipation:	20 W
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	KSE13003
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Collector Current (Ic)	1.5A
Collector-Emitter Breakdown Voltage (Vceo)	400V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)	3V@500mA, 1.5A
DC Current Gain (hFE@Ic,Vce)	14@500mA, 2V
Power Dissipation (Pd)	20W
Transistor Type	NPN
Transition Frequency (fT)	4MHz
Maximum Collector Base Voltage	700 V
Maximum Collector Emitter Voltage	400 V
Maximum DC Collector Current	1.5 A
Maximum Emitter Base Voltage	9 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	20 W
Minimum DC Current Gain	9, 14
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-126
Pin Count	3
Transistor Configuration	Single
Вес, г	1