MAT12AHZ, Массив биполярных транзисторов, NPN, 40 В, 20 мА, 300 hFE, TO-78

PartNumber: MAT12AHZ
Ном. номер: 8084292848
Производитель: Analog Devices
MAT12AHZ, Массив биполярных транзисторов, NPN, 40 В, 20 мА, 300 hFE, TO-78
Доступно на заказ 663 шт. Отгрузка со склада в г.Москва 2-3 недели.
2 060 руб. × = 2 060 руб.
от 10 шт. — 1 760 руб.
от 100 шт. — 1 560 руб.

Описание

The MAT12AHZ is a NPN dual-matched Bipolar Transistor Array specifically designed to meet the requirements of ultralow noise audio systems. It has extremely low input base spreading resistance and high current gain. It can achieve outstanding signal-to-noise ratios. The high current gain results in superior performance compared to systems incorporating commercially available monolithic amplifiers. Excellent matching of the current gain (∆hFE) to about 0.5% and low VOS of less than 10µV typical make the MAT12 ideal for symmetrically balanced designs, which reduce high-order amplifier harmonic distortion. Stability of the matching parameters is guaranteed by protection diodes across the base emitter junction. These diodes prevent degradation of beta and matching characteristics due to reverse biasing of the base emitter junction. The device is also an ideal choice for accurate and reliable current biasing and mirroring circuits.

• Very low voltage noise - 1nV/√Hz max @ 100Hz
• 0.5% Excellent current gain match
• 200µV Maximum low offset voltage (VOS)
• 0.03µV/°C Outstanding offset voltage drift
• 200MHz High gain bandwidth product
• -40 to 85°C Operating temperature range

Полупроводники - Дискретные\Транзисторы\Биполярные Транзисторы

Технические параметры

Максимальная Рабочая Температура
85°C
Количество Выводов
6вывод(-ов)
Напряжение Коллектор-Эмиттер
40В
Стиль Корпуса Транзистора
TO-78
Полярность Транзистора
NPN
DC Ток Коллектора
20мА
DC Усиление Тока hFE
300hFE

Дополнительная информация

Datasheet MAT12AHZ