MMBT5550LT1G, Транзистор маломощный SOT23-3

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9 руб.
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Номенклатурный номер: 8030573016
Артикул: MMBT5550LT1G

Описание

Биполярный транзистор, NPN, 140 В, 0.6 А, 0,225 Вт

Технические параметры

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.21.00.95
Type NPN
Product Category Bipolar Small Signal
Material Si
Configuration Single
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 160
Maximum Collector-Emitter Voltage (V) 140
Maximum Emitter Base Voltage (V) 6
Operating Junction Temperature (°C) -55 to 150
Maximum Base Emitter Saturation Voltage (V) 1@1mA@10mA|1.2@5mA@50mA
Maximum Collector-Emitter Saturation Voltage (V) 0.15@1mA@10mA|0.25@5mA@50mA
Maximum DC Collector Current (A) 0.6
Maximum Collector Cut-Off Current (nA) 100
Minimum DC Current Gain 60@1mA@5V|60@10mA@5V|20@50mA@5V
Maximum Power Dissipation (mW) 300
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive No
Standard Package Name SOT
Pin Count 3
Supplier Package SOT-23
Military No
Mounting Surface Mount
Package Height 0.94
Package Length 2.9
Package Width 1.3
PCB changed 3
Lead Shape Gull-wing
Brand ON Semiconductor
Collector- Base Voltage VCBO 180 V
Collector- Emitter Voltage VCEO Max 140 V
Collector-Emitter Saturation Voltage 0.15 V
Continuous Collector Current 600 mA
DC Collector/Base Gain Hfe Min 60
Emitter- Base Voltage VEBO 6 V
Factory Pack Quantity 3000
Manufacturer ON Semiconductor
Maximum DC Collector Current 600 mA
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Package / Case SOT-23-3
Pd - Power Dissipation 225 mW
Product Type BJTs-Bipolar Transistors
Series MMBT5550L
Subcategory Transistors
Transistor Polarity NPN
Вес, г 0.02

Техническая документация

Datasheet
pdf, 192 КБ
Datasheet MMBT5550LT1G
pdf, 175 КБ