N25Q032A13EF640E, Флеш память, NOR, 32 Мбит, 4М x 8бит, 108 МГц, SPI, DFN, 8 вывод(-ов)

PartNumber: N25Q032A13EF640E
Ном. номер: 8035299211
Производитель: Micron
N25Q032A13EF640E, Флеш память, NOR, 32 Мбит, 4М x 8бит, 108 МГц, SPI, DFN, 8 вывод(-ов)
Доступно на заказ 2826 шт. Отгрузка со склада в г.Москва 2-3 недели.
45 руб. × = 45 руб.


The N25Q032A13EF640E is a 32MB high-performance multiple input/output serial NOR Flash Memory manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms and a high-speed SPI-compatible bus interface. Innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. The memory is organized as 64kB main sectors that are further divided into 16 subsectors each. The memory can be erased one 4kB subsector at a time, 64kB sectors at a time or as a whole. The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64kB for volatile protections. The device also has the ability to pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.

• SPI-compatible serial bus interface
• 108MHz Maximum clock frequency
• Dual/quad I/O instruction provides increased throughput up to 432MHz
• Supported protocols - extended SPI, dual I/O and quad I/O
• Execute-in-place (XIP) mode for all protocols
• Configurable via volatile or nonvolatile registers
• Enables memory to work in XIP mode directly after power-on
• Continuous read of entire memory via a single command
• Configurable number of dummy cycles
• Configurable output buffer
• Software reset
• Erase capability - full chip erase
• Write protection - Software write protection applicable to every 64Kb sector via volatile lock bit
• Electronic signature - JEDEC-standard 2-byte signature
• Minimum 100000 erase cycles per sector
• More than 20 years data retention

Полупроводники - Микросхемы\Память\FLASH

Технические параметры

Тип памяти
Флэш - ИЛИ-НЕ
Линия Продукции
3V Serial NOR Flash Memories
Минимальная Рабочая Температура
Максимальная Рабочая Температура
Максимальное Напряжение Питания
Минимальное Напряжение Питания
Количество Выводов
Уровень Чувствительности к Влажности (MSL)
MSL 3 - 168 часов
Тип Интерфейса ИС
Тактовая Частота
Стиль Корпуса Микросхемы Памяти
Размер Памяти
Конфигурация Флэш-памяти
4М x 8бит

Дополнительная информация

Datasheet N25Q032A13EF640E