NDS352AP, Транзистор P-канал 30В 900мА [SSOT3]

Артикул: NDS352AP
Ном. номер: 9000291292
Производитель: Fairchild Semiconductor
Фото 1/2 NDS352AP, Транзистор P-канал 30В 900мА [SSOT3]
Фото 2/2 NDS352AP, Транзистор P-канал 30В 900мА [SSOT3]
Доступно на заказ 20 шт. Отгрузка со склада в г.Москва 4-5 недель.
50 руб. × = 500 руб.
Количество товаров должно быть кратно 10 шт.

Описание

Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Техническая документация

NDS352AP
pdf, 84 КБ

Дополнительная информация

Trans MOSFET P-CH 30V 0.9A 3- SuperSOT NDS352AP