NGD8201ANT4G, Транзистор IGBT 440В 20А 125Вт [D-PAK]
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Есть в наличии более 70 шт. Отгрузка со склада в г.Москва 1 рабочий день.
| 70 руб. | × | = | 70 руб. |
от 50 шт. — 61 руб.
от 500 шт. — по запросу
Цена и наличие в магазинах
Описание
IGBT Discretes, ON Semiconductor
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Техническая документация
Datasheet - NGD8201N, NGD8201AN
pdf, 121 КБ
Дополнительная информация
Datasheet NGD8201ANT4G
NGD8201N, NGD8201AN, Ignition IGBT 20A 400V N−Channel DPAK NGD8201ANT4G
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
