QEE113, ИК излучатель, 50 °, Side Looking, 100 мА, 1.5 В, 800 нс, 800 нс
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The QEE113 is a 940nm GaAs Infrared LED is suitable for QSE113 photosensor. It has 50° medium wide emission angle and grey stripe on the top side. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
• GaAs chip material
• High output power
Оптоэлектроника и Дисплеи\ИК Продукты\ИК Излучатели (Эмиттеры)