RFD14N05LSM
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
499 шт. со склада г.Москва, срок 8-9 дней
300 руб.
Мин. кол-во для заказа 2 шт.
от 5 шт. —
230 руб.
от 10 шт. —
205 руб.
от 75 шт. —
181.25 руб.
Добавить в корзину 2 шт.
на сумму 600 руб.
Номенклатурный номер: 8004232591
Бренд: Нет торговой марки
Описание
Электроэлемент
Описание Транзистор: N-MOSFET, полевой, 50В, 14А, 48Вт, TO252AA Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand | ON Semiconductor/Fairchild |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 75 |
| Fall Time | 16 ns |
| Height | 2.39 mm |
| Id - Continuous Drain Current | 14 A |
| Length | 6.73 mm |
| Manufacturer | ON Semiconductor |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Tube |
| Part # Aliases | RFD14N05LSM_NL |
| Pd - Power Dissipation | 48 W |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 100 mOhms |
| Rise Time | 24 ns |
| RoHS | Details |
| Series | RFD14N05LSM |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 42 ns |
| Typical Turn-On Delay Time | 13 ns |
| Unit Weight | 0.009184 oz |
| Vds - Drain-Source Breakdown Voltage | 50 V |
| Vgs - Gate-Source Voltage | 10 V |
| Width | 6.22 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Resistance | 100 mΩ |
| Maximum Drain Source Voltage | 50 V |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Maximum Power Dissipation | 48 W |
| Minimum Gate Threshold Voltage | 1V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 25 nC @ 5 V, 40 nC @ 10 V |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 75 |
| Fall Time: | 16 ns |
| Id - Continuous Drain Current: | 14 A |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | DPAK-3 |
| Packaging: | Tube |
| Part # Aliases: | RFD14N05LSM_NL |
| Pd - Power Dissipation: | 48 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 40 nC |
| Rds On - Drain-Source Resistance: | 100 mOhms |
| Rise Time: | 24 ns |
| Series: | RFD14N05LSM |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 42 ns |
| Typical Turn-On Delay Time: | 13 ns |
| Vds - Drain-Source Breakdown Voltage: | 50 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.57 |
Техническая документация
Datasheet
pdf, 1043 КБ
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 1040 КБ
Datasheet RFD14N05LSM
pdf, 73 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
