SBC846BPDW1T1G, Trans GP BJT NPN/PNP 65V 0.1A 380mW Automotive 6-Pin SC-88 T/R

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17 руб.

Кратность заказа 3000 шт.

от 9000 шт. — 16 руб.

Добавить в корзину 3000 шт. на сумму 51 000 руб.

Номенклатурный номер: 8003319541

Артикул: SBC846BPDW1T1G

Semiconductor - Discrete > Transistors > BJT - General Purpose

Brand	ON Semiconductor
Collector- Base Voltage VCBO	80 V
Collector- Emitter Voltage VCEO Max	65 V
Collector-Emitter Saturation Voltage	0.6 V
Configuration	Dual
DC Collector/Base Gain Hfe Min	200 at 2 mA, 5 V
DC Current Gain HFE Max	475 at 2 mA, 5 V
Emitter- Base Voltage VEBO	6 V, -5 V
Factory Pack Quantity	3000
Gain Bandwidth Product FT	100 MHz
Manufacturer	ON Semiconductor
Maximum DC Collector Current	100 mA
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	SOT-363-6
Packaging	Cut Tape or Reel
Pd - Power Dissipation	380 mW
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Qualification	AEC-Q101
Series	BC846BPDW1
Subcategory	Transistors
Transistor Polarity	NPN, PNP
Brand:	onsemi
Collector- Base Voltage VCBO:	80 V
Collector- Emitter Voltage VCEO Max:	65 V
Collector-Emitter Saturation Voltage:	600 mV, 650 mV
Configuration:	Dual
DC Collector/Base Gain hfe Min:	200 at 2 mA, 5 V
DC Current Gain hFE Max:	475 at 2 mA, 5 V
Emitter- Base Voltage VEBO:	6 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	100 MHz
Manufacturer:	onsemi
Maximum DC Collector Current:	100 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Pd - Power Dissipation:	380 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Qualification:	AEC-Q101
Series:	BC846BPDW1
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN, PNP
Вес, г	1