SBC857BDW1T1G, Trans GP BJT PNP 45V 0.2A 380mW Automotive 6-Pin SC-88 T/R
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Описание
Semiconductor - Discrete > Transistors > BJT - General Purpose
The Dual PNP Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-363/SC-88, which is designed for low power surface mount applications.
Технические параметры
| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| Type | PNP |
| Product Category | Bipolar Small Signal |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@0.5mA@10mA|0.65@5mA@100mA |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Minimum DC Current Gain | 220@2mA@5V |
| Maximum Power Dissipation (mW) | 380 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Temperature Grade | Automotive |
| Packaging | Tape and Reel |
| Automotive | Yes |
| AEC Qualified Number | AEC-Q101 |
| Pin Count | 6 |
| Supplier Package | SOT-363 |
| Standard Package Name | SOT |
| Military | No |
| Mounting | Surface Mount |
| Package Height | 0.9 |
| Package Length | 2 |
| Package Width | 1.25 |
| PCB changed | 6 |
| Lead Shape | Gull-wing |
| Maximum Collector Emitter Voltage | 30 V |
| Maximum DC Collector Current | 100 mA |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 380 mW |
| Mounting Type | Surface Mount |
| Package Type | SOT-363 |
| Transistor Configuration | Dual |
| Transistor Type | NPN/PNP |
| Brand: | onsemi |
| Collector- Base Voltage VCBO: | 50 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 650 mV |
| Configuration: | Dual |
| DC Collector/Base Gain hfe Min: | 220 at-2 mA, -5 V |
| DC Current Gain hFE Max: | 475 at-2 mA, -5 V |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Gain Bandwidth Product fT: | 100 MHz |
| Manufacturer: | onsemi |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Pd - Power Dissipation: | 380 mW |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Qualification: | AEC-Q101 |
| Series: | BC857BDW1 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | PNP |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные (BJTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
