SI3493DDV-T1-GE3
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см. техническую документацию
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25 руб.
Кратность заказа 3000 шт.
от 9000 шт. —
24 руб.
Добавить в корзину 3000 шт.
на сумму 75 000 руб.
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Описание
TrenchFET Gen III P-Channel Power MOSFETs
Vishay / Siliconix TrenchFET ® Gen III P-Channel Power MOSFETs offer low on-resistance, low-voltage drops, increased efficiency, and battery time. These power MOSFETs are available in a variety of package sizes. The P-channel MOSFETs offer on-resistance ratings that accommodate a wide range of applications. Applications include load switches, adapter switches, battery switches, DC motors, and charger switches.
Vishay / Siliconix TrenchFET ® Gen III P-Channel Power MOSFETs offer low on-resistance, low-voltage drops, increased efficiency, and battery time. These power MOSFETs are available in a variety of package sizes. The P-channel MOSFETs offer on-resistance ratings that accommodate a wide range of applications. Applications include load switches, adapter switches, battery switches, DC motors, and charger switches.
Технические параметры
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 40 ns |
| Forward Transconductance - Min: | 30 S |
| Id - Continuous Drain Current: | 8 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TSOP-6 |
| Pd - Power Dissipation: | 3.6 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 52.2 nC |
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Rise Time: | 20 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 115 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Channel Type | P Channel |
| Drain Source On State Resistance | 0.02Ом |
| Power Dissipation | 3.6Вт |
| Количество Выводов | 6вывод(-ов) |
| Линейка Продукции | TrenchFET |
| Максимальная Рабочая Температура | 150 C |
| Монтаж транзистора | Surface Mount |
| Напряжение Измерения Rds(on) | 4.5В |
| Напряжение Истока-стока Vds | 20В |
| Непрерывный Ток Стока | 8А |
| Полярность Транзистора | P Канал |
| Пороговое Напряжение Vgs | 1В |
| Рассеиваемая Мощность | 3.6Вт |
| Сопротивление во Включенном Состоянии Rds(on) | 0.02Ом |
| Стиль Корпуса Транзистора | TSOP |
| Уровень Чувствительности к Влажности (MSL) | MSL 1-Безлимитный |
| Channel Mode | Enhancement |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 8 A |
| Maximum Drain Source Resistance | 51 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 3.6 W |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TSOP-6 |
| Pin Count | 6 |
| Series | TrenchFET |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 34.8 nC @-8 V |
| Width | 1.7mm |
