SI4459ADY-T1-GE3, Транзистор P-MOSFET, полевой, -30В, -23,5А, 5Вт, SO8
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Описание
Описание Транзистор P-MOSFET, полевой, -30В, -23,5А, 5Вт, SO8 Характеристики
| Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 29 |
| Maximum Drain Source Resistance (mOhm) | 5 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 3500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SOP |
| Supplier Package | SOIC N |
| Typical Fall Time (ns) | 20|40 |
| Typical Gate Charge @ 10V (nC) | 129 |
| Typical Gate Charge @ Vgs (nC) | 129 10V|61 4.5V |
| Typical Gate to Drain Charge (nC) | 23.5 |
| Typical Gate to Source Charge (nC) | 16.5 |
| Typical Input Capacitance @ Vds (pF) | 6000 15V |
| Typical Output Capacitance (pF) | 860 |
| Typical Reverse Recovery Charge (nC) | 74 |
| Typical Rise Time (ns) | 16|130 |
| Typical Turn-Off Delay Time (ns) | 80|60 |
| Typical Turn-On Delay Time (ns) | 16|75 |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 20 ns |
| Forward Transconductance - Min: | 24 S |
| Id - Continuous Drain Current: | 29 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOIC-8 |
| Part # Aliases: | SI4459ADY-GE3 |
| Pd - Power Dissipation: | 7.8 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 129 nC |
| Rds On - Drain-Source Resistance: | 5 mOhms |
| Rise Time: | 16 ns |
| Series: | SI4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 1 P-Channel |
| Typical Turn-Off Delay Time: | 80 ns |
| Typical Turn-On Delay Time: | 16 ns |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Вес, г | 0.15 |
Техническая документация
Datasheet SI4459ADY-T1-GE3
pdf, 187 КБ
Si4459ADY
pdf, 250 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
