SIHB12N65E-GE3, Силовой МОП-транзистор, N Канал, 650 В, 12 А, 0.33 Ом, TO-263 (D2PAK), Surface Mount

SIHB12N65E-GE3, Силовой МОП-транзистор, N Канал, 650 В, 12 А, 0.33 Ом, TO-263 (D2PAK), Surface Mount
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640 руб.
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Номенклатурный номер: 8736312180
Артикул: SIHB12N65E-GE3

Описание

E Series High Voltage MOSFETs Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific on-resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low on-resistance (RDS(ON)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). E series MOSFETs are available in 800VDS high-voltage variants with drain current (ID) that ranges from 2.8A to 17.4A. Also, new Vishay Siliconix 600V E Series MOSFETs have been added to the PowerPAK® 8x8 surface mount package. Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Технические параметры

Brand: Vishay/Siliconix
Channel Mode: Enhancement
Compliance: Done
Configuration: Single
Factory Pack Quantity: 1000
Fall Time: 18 ns
Id - Continuous Drain Current: 12 A
Manufacturer: Vishay
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: D2PAK-3(TO-263-3)
Packaging: Bulk
Pd - Power Dissipation: 156 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 35 nC
Rds On - Drain-Source Resistance: 380 mOhms
Rise Time: 19 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Typical Turn-Off Delay Time: 35 ns
Typical Turn-On Delay Time: 16 ns
Vds - Drain-Source Breakdown Voltage: 700 V
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Вес, г 1.4

Техническая документация

Дополнительная информация

Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов