SIHP080N60E-GE3, Силовой МОП-транзистор, N Канал, 600 В, 35 А, 0.07 Ом, TO-220AB, Through Hole

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Номенклатурный номер: 8009520759

Артикул: SIHP080N60E-GE3

Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторы

The Vishay E Series Power MOSFET reduced switching and conduction losses. Low figure-of-merit (FOM) Ron x Qg

Brand:	Vishay/Siliconix
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	31 ns
Forward Transconductance - Min:	4.6 S
Id - Continuous Drain Current:	35 A
Manufacturer:	Vishay
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220AB-3
Packaging:	Tube
Pd - Power Dissipation:	227 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	42 nC
Rds On - Drain-Source Resistance:	80 mOhms
Rise Time:	96 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	31 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	35 A
Maximum Drain Source Resistance	0.08 Ω
Maximum Drain Source Voltage	650 V
Maximum Gate Threshold Voltage	5V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220AB
Pin Count	3
Series	E Series
Transistor Material	Si
Вес, г	1