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SSM3K37MFV.L3F

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563 шт. со склада г.Москва, срок 8-9 дней

110 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 54 руб.

от 10 шт. — 36 руб.

от 100 шт. — 19.28 руб.

Добавить в корзину 2 шт. на сумму 220 руб.

Альтернативные предложения3

Номенклатурный номер: 8004147184

Бренд: Нет торговой марки

Описание

Электроэлемент

20V 250mA 2.2Ohm@4.5V,100mA 150mW 1V@1mA N Channel SOT-723 MOSFETs

Технические параметры

Current - Continuous Drain (Id) @ 25В°C	250mA(Ta)
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	12pF @ 10V
Manufacturer	Toshiba Semiconductor and Storage
Mounting Type	Surface Mount
Operating Temperature	150В°C(TJ)
Package / Case	SOT-723
Packaging	Tape & Reel(TR)
Part Status	Active
Power Dissipation (Max)	150mW(Ta)
Rds On (Max) @ Id, Vgs	2.2 Ohm @ 100mA, 4.5V
Series	U-MOSIII
Supplier Device Package	VESM
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±10V
Vgs(th) (Max) @ Id	1V @ 1mA
Continuous Drain Current (Id) @ 25В°C	250mA
Power Dissipation-Max (Ta=25В°C)	150mW
Rds On - Drain-Source Resistance	2.2О© @ 100mA,4.5V
Transistor Polarity	N Channel
Vds - Drain-Source Breakdown Voltage	20V
Vgs - Gate-Source Voltage	1V @ 1mA
Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant
Material	Si
Maximum Continuous Drain Current (A)	0.25
Maximum Drain Source Resistance (mOhm)	2200@4.5V
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±10
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	150
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Number of Elements per Chip	1
PCB changed	3
Pin Count	3
PPAP	No
Product Category	Small Signal
Supplier Package	VESM
Typical Input Capacitance @ Vds (pF)	12@10V
Brand:	Toshiba
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	8000
Id - Continuous Drain Current:	250 mA
Manufacturer:	Toshiba
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-723-3
Pd - Power Dissipation:	150 mW
Product Category:	MOSFET
Product Type:	MOSFET
Rds On - Drain-Source Resistance:	2.2 Ohms
Series:	SSM3K36
Subcategory:	MOSFETs
Technology:	Si
Tradename:	U-MOSIII
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	36 ns
Typical Turn-On Delay Time:	18 ns
Vds - Drain-Source Breakdown Voltage:	20 V
Vgs - Gate-Source Voltage:	-10 V, +10 V
Vgs th - Gate-Source Threshold Voltage:	350 mV
Maximum Continuous Drain Current	250 mA
Maximum Drain Source Resistance	5.6 Ω
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	±10 V
Maximum Gate Threshold Voltage	1V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	150 mW
Minimum Gate Threshold Voltage	0.35V
Package Type	SOT-723
Transistor Configuration	Single
Width	1.2mm
Вес, г	0.008