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SST26VF032B-104I/MF, Флеш память, NOR, Последовательная NOR, 32 Мбит, SPI, SDI, SQI, WDFN, 8 вывод(-ов)

Ном. номер: 8211682429
PartNumber: SST26VF032B-104I/MF
Производитель: Microchip
Фото 1/2 SST26VF032B-104I/MF, Флеш память, NOR, Последовательная NOR, 32 Мбит, SPI, SDI, SQI, WDFN, 8 вывод(-ов)
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см. техническую документацию
Фото 2/2 SST26VF032B-104I/MF, Флеш память, NOR, Последовательная NOR, 32 Мбит, SPI, SDI, SQI, WDFN, 8 вывод(-ов)
180 руб.
166 шт. со склада г.Москва,
срок 2-3 недели
от 10 шт. — 174 руб.
от 25 шт. — 170 руб.
Добавить в корзину 1 шт. на сумму 180 руб.

The SST26VF032B-104I/MF is a 32MB serial quad I/O (SQI) Flash Memory features a 6-wire, 4-bit I/O interface that allows for low-power, high-performance operation. It also supports full command-set compatibility to traditional serial peripheral interface (SPI) protocol. System designs using SQI flash devices occupy less board space. It is manufactured with proprietary, high-performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. It is significantly improves performance and reliability, while lowering power consumption. This device writes with a single power supply of 2.7 to 3.6V. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or program operation is less than alternative flash memory technologies.

• Serial interface architecture - mode 0/3
• Nibble-wide multiplexed I/O with SPI-like serial command structure
• High speed clock frequency - 104MHz maximum
• Burst modes - continuous linear burst
• Superior reliability
• Endurance - 100000 cycles minimum
• Greater than 100 years data retention
• Low power consumption
• Fast erase time
• End-of-write detection - software polling the BUSY bit in status register
• Flexible erase capability
• Write-suspend - suspend program or erase operation to access another block/sector
• Software reset (RST) mode
• Software write protection
• Individual-block write protection with permanent lock-down capability
• Read protection on top and bottom 8-Kbyte parameter blocks
• Security ID
• User-programmable area

Полупроводники - Микросхемы\Память\FLASH

Технические параметры

Минимальная Рабочая Температура
Максимальная Рабочая Температура
Максимальное Напряжение Питания
Минимальное Напряжение Питания
Количество Выводов
Тип Интерфейса ИС
Тактовая Частота
Стиль Корпуса Микросхемы Памяти
Размер Памяти
Линейка Продукции
Тип Flash Памяти
EU RoHS
Compliant
ECCN (US)
3A991.b.1.a
Part Status
Active
HTS
8542.32.00.71
Cell Type
NOR
Chip Density (bit)
32M
Architecture
Sectored
Boot Block
Yes
Block Organization
Symmetrical
Location of Boot Block
Top|Bottom
Address Bus Width (bit)
32
Sector Size
4Kbyte x 1024
Page Size
256byte
Programmability
Yes
Timing Type
Synchronous
Maximum Erase Time (s)
0.05/Chip
Maximum Programming Time (ms)
1.5/Page
Process Technology
CMOS
Interface Type
Serial (SPI, Dual SPI, Quad SPI)
Minimum Operating Supply Voltage (V)
2.7
Typical Operating Supply Voltage (V)
3|3.3
Maximum Operating Supply Voltage (V)
3.6
Programming Voltage (V)
2.7 to 3.6
Operating Current (mA)
20
Program Current (mA)
25
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Industrial
Command Compatible
No
ECC Support
No
Erase Suspend/Resume Modes Support
Yes
Simultaneous Read/Write Support
No
Support of Common Flash Interface
No
Support of Page Mode
No
Minimum Endurance (Cycles)
100000
Packaging
Tube
Supplier Package
WDFN EP
Standard Package Name
DFN
Pin Count
8
Mounting
Surface Mount
Package Height
0.73
Package Length
5
Package Width
6
PCB changed
8
Lead Shape
No Lead
Вес, г
0.2

Дополнительная информация

Datasheet SST26VF032B-104I/MF
Datasheet SST26VF032B-104I/MF

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