SST26VF032B-104I/MF, Флеш память, NOR, 32 Мбит, 104 МГц, SPI, SDI, SQI, WDFN, 8 вывод(-ов)

PartNumber: SST26VF032B-104I/MF
Ном. номер: 8211682429
Производитель: Microchip
SST26VF032B-104I/MF, Флеш память, NOR, 32 Мбит, 104 МГц, SPI, SDI, SQI, WDFN, 8 вывод(-ов)
Доступно на заказ 256 шт. Отгрузка со склада в г.Москва 2-3 недели.
190 руб. × = 190 руб.
от 10 шт. — 153 руб.
от 25 шт. — 148 руб.


The SST26VF032B-104I/MF is a 32MB serial quad I/O (SQI) Flash Memory features a 6-wire, 4-bit I/O interface that allows for low-power, high-performance operation. It also supports full command-set compatibility to traditional serial peripheral interface (SPI) protocol. System designs using SQI flash devices occupy less board space. It is manufactured with proprietary, high-performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. It is significantly improves performance and reliability, while lowering power consumption. This device writes with a single power supply of 2.7 to 3.6V. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or program operation is less than alternative flash memory technologies.

• Serial interface architecture - mode 0/3
• Nibble-wide multiplexed I/O with SPI-like serial command structure
• High speed clock frequency - 104MHz maximum
• Burst modes - continuous linear burst
• Superior reliability
• Endurance - 100000 cycles minimum
• Greater than 100 years data retention
• Low power consumption
• Fast erase time
• End-of-write detection - software polling the BUSY bit in status register
• Flexible erase capability
• Write-suspend - suspend program or erase operation to access another block/sector
• Software reset (RST) mode
• Software write protection
• Individual-block write protection with permanent lock-down capability
• Read protection on top and bottom 8-Kbyte parameter blocks
• Security ID
• User-programmable area

Полупроводники - Микросхемы\Память\FLASH

Технические параметры

Линия Продукции
3V Serial NOR Flash Memories
Минимальная Рабочая Температура
-40 C
Максимальная Рабочая Температура
85 C
Максимальное Напряжение Питания
Минимальное Напряжение Питания
Количество Выводов
Тип Интерфейса ИС
Тактовая Частота
Стиль Корпуса Микросхемы Памяти
Размер Памяти
Соответствует Фталатам RoHS

Дополнительная информация

Datasheet SST26VF032B-104I/MF