STD3NK100Z
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см. техническую документацию
см. техническую документацию
1 шт. со склада г.Москва, срок 8-11 дней
670 руб.
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на сумму 670 руб.
Альтернативные предложения2
Номенклатурный номер: 8002007442
Бренд: Нет торговой марки
Описание
Электроэлемент
Описание Транзистор N-МОП, полевой, 1KВ 2.5A DPAK Характеристики | Категория | Транзистор |
| Тип | БТИЗ |
| Вид | IGBT |
Технические параметры
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 2500 |
| Fall Time | 32 ns |
| Height | 2.4 mm |
| Id - Continuous Drain Current | 2.5 A |
| Length | 6.6 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 90 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 18 nC |
| Rds On - Drain-Source Resistance | 6 Ohms |
| Rise Time | 7.5 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 39 ns |
| Typical Turn-On Delay Time | 15 ns |
| Vds - Drain-Source Breakdown Voltage | 1000 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 6.2 mm |
| Automotive | No |
| Channel Type | N |
| ECCN (US) | EAR99 |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 2.5 |
| Maximum Diode Forward Voltage (V) | 1.6 |
| Maximum Drain Source Resistance (mOhm) | 6000@10V |
| Maximum Drain Source Voltage (V) | 1000 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 4.5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 30 |
| Maximum Power Dissipation (mW) | 90000 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 10 |
| Minimum Gate Threshold Voltage (V) | 3 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | SuperMESH |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Drain Source Resistance @ 25°C (mOhm) | 5400@10V |
| Typical Fall Time (ns) | 32 |
| Typical Gate Charge @ 10V (nC) | 18 |
| Typical Gate Charge @ Vgs (nC) | 18@10V |
| Typical Gate Plateau Voltage (V) | 6 |
| Typical Gate Threshold Voltage (V) | 3.75 |
| Typical Gate to Drain Charge (nC) | 9.2 |
| Typical Gate to Source Charge (nC) | 3.6 |
| Typical Input Capacitance @ Vds (pF) | 601@25V |
| Typical Output Capacitance (pF) | 53 |
| Typical Reverse Recovery Charge (nC) | 2500 |
| Typical Reverse Recovery Time (ns) | 628 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 12@25V |
| Typical Rise Time (ns) | 7.5 |
| Typical Turn-Off Delay Time (ns) | 39 |
| Typical Turn-On Delay Time (ns) | 15 |
| Вес, г | 0.42 |
Техническая документация
Datasheet
pdf, 874 КБ
Datasheet STD3NK100Z
pdf, 417 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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