STF4N90K5, Силовой МОП-транзистор, N Канал, 900 В, 4 А, 1.9 Ом, TO-220FP, Through Hole
105 шт., срок 8-10 недель
540 руб.
Мин. кол-во для заказа 5 шт.
от 10 шт. —
460 руб.
от 100 шт. —
378 руб.
Добавить в корзину 5 шт.
на сумму 2 700 руб.
Альтернативные предложения3
Описание
N-канал 900V 4A (Tc) 20W (Tc) сквозное отверстие TO-220FP
Технические параметры
| Base Product Number | STF4N90 -> |
| Current - Continuous Drain (Id) @ 25В°C | 4A (Tc) |
| Drain to Source Voltage (Vdss) | 900V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.3nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 173pF @ 100V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 20W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 1A, 10V |
| REACH Status | REACH Unaffected |
| Series | MDmeshв„ў K5 -> |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5V @ 100ВµA |
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 1000 |
| Fall Time | 25.5 ns |
| Id - Continuous Drain Current | 4 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 20 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 5.3 nC |
| Rds On - Drain-Source Resistance | 1.9 Ohms |
| Rise Time | 11.8 ns |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 26.4 ns |
| Typical Turn-On Delay Time | 10.5 ns |
| Vds - Drain-Source Breakdown Voltage | 900 V |
| Vgs - Gate-Source Voltage | +/-30 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Continuous Drain Current (Id) | 4A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.1Ω@1A, 10V |
| Drain Source Voltage (Vdss) | 900V |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@100uA |
| Input Capacitance (Ciss@Vds) | 173pF@100V |
| Power Dissipation (Pd) | 20W |
| Total Gate Charge (Qg@Vgs) | 5.3nC@10V |
| Type | null |
| Вес, г | 1.9 |
Техническая документация
Datasheet
pdf, 708 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
