STF5NK100Z, Trans MOSFET N-CH 1KV 3.5A 3-Pin(3+Tab) TO-220FP Tube
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см. техническую документацию
см. техническую документацию
13051 шт., срок 7-9 недель
450 руб.
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Альтернативные предложения1
Описание
Semiconductor - Discrete > Transistors > FET - MOSFET
Описание Транзистор N-МОП, полевой, 1000В, 2,2А, 30Вт, TO220FP Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 19 ns |
| Forward Transconductance - Min: | 4 S |
| Id - Continuous Drain Current: | 3.5 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 125 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 42 nC |
| Rds On - Drain-Source Resistance: | 3.7 Ohms |
| Rise Time: | 7.7 ns |
| Series: | STF5NK100Z |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | SuperMESH |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 51.5 ns |
| Typical Turn-On Delay Time: | 22.5 ns |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 3.5 A |
| Maximum Drain Source Resistance | 3.7 Ω |
| Maximum Drain Source Voltage | 1000 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 30 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Series | MDmesh, SuperMESH |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 42 nC @ 10 V |
| Width | 4.6mm |
| Case | TO220FP |
| Drain current | 2.2A |
| Drain-source voltage | 1kV |
| Features of semiconductor devices | ESD protected gate |
| Gate-source voltage | ±30V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | STMicroelectronics |
| Mounting | THT |
| On-state resistance | 3.7Ω |
| Polarisation | unipolar |
| Power dissipation | 30W |
| Technology | SuperMESH3™ |
| Type of transistor | N-MOSFET |
| Вес, г | 1 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 439 КБ
Datasheet
pdf, 456 КБ
Datasheet STP5NK100Z, STF5NK100Z, STW5NK100Z
pdf, 453 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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