STGF10NC60KD, STGF10NC60KD,IGBT N-ch 60

PartNumber: STGF10NC60KD
Ном. номер: 8014998066
Производитель: ST Microelectronics
STGF10NC60KD, STGF10NC60KD,IGBT N-ch 60
Доступно на заказ 40 шт. Отгрузка со склада в г.Москва 4-5 недель.
120 руб. × = 1 200 руб.
Количество товаров должно быть кратно 10 шт.
от 20 шт. — 98 руб.

Описание

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Semiconductors

Технические параметры

Channel Type
N
конфигурация
Single
Dimensions
10.4 x 4.6 x 16.4mm
Maximum Collector Emitter Voltage
600 V
Maximum Continuous Collector Current
9 A
Maximum Gate Emitter Voltage
±20V
Maximum Operating Temperature
+150 °C
Максимальная рассеиваемая мощность
25 W
Minimum Operating Temperature
-55 °C
Package Type
TO-220FP
Pin Count
3
Switching Speed
1MHz
Width
4.6mm
высота
16.4mm
длина
10.4mm
Mounting Type
Through Hole

Дополнительная информация

STGB10NC60KD, STGD10NC60KD, STGF10NC60KD, STGP10NC60KD, 10A, 600V Short-Circuit Rugged IGBT Data Sheet STGF10NC60KD