STGF14NC60KD, Биполярный транзистор IGBT, 600 В, 11 А, 28 Вт

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13 шт. со склада г.Москва, срок 12 дней

150 руб.

Мин. кол-во для заказа 4 шт.

от 11 шт. — 130 руб.

Добавить в корзину 4 шт. на сумму 600 руб.

Альтернативные предложения3

Номенклатурный номер: 8714693149

Артикул: STGF14NC60KD

Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы

Биполярный транзистор IGBT, 600 В, 11 А, 28 Вт

Корпус	TO-220F
Base Part Number	STG*14NC
Current - Collector (Ic) (Max)	11A
Current - Collector Pulsed (Icm)	50A
Gate Charge	34.4nC
IGBT Type	-
Input Type	Standard
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-220-3 Full Pack
Packaging	Tube
Part Status	Active
Power - Max	28W
Reverse Recovery Time (trr)	37ns
Series	PowerMESHв(ў
Supplier Device Package	TO-220FP
Switching Energy	82ВµJ(on), 155ВµJ(off)
Td (on/off) @ 25В°C	22.5ns/116ns
Test Condition	390V, 7A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 7A
Voltage - Collector Emitter Breakdown (Max)	600V
Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	600 V
Collector-Emitter Saturation Voltage:	2 V
Configuration:	Single
Continuous Collector Current at 25 C:	11 A
Continuous Collector Current Ic Max:	11 A
Continuous Collector Current:	7 A
Factory Pack Quantity: Factory Pack Quantity:	1000
Gate-Emitter Leakage Current:	150 uA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, 20 V
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package/Case:	TO-220-3 FP
Packaging:	Tube
Pd - Power Dissipation:	28 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGF14NC60KD
Subcategory:	IGBTs
Technology:	Si
Вес, г	3.5