STP110N10F7, Силовой МОП-транзистор, N Канал, 100 В, 110 А, 0.0051 Ом, TO-220AB, Through Hole
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847 шт., срок 8-10 недель
690 руб.
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Описание
Описание Транзистор N-МОП, полевой, 100В 110A 150Вт 0,007Ом TO220
Технические параметры
| Base Product Number | STP110 -> |
| Current - Continuous Drain (Id) @ 25В°C | 110A (Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 5500pF @ 50V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 150W (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 55A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | DeepGATEв„ў, STripFETв„ў VII -> |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 110 A |
| Maximum Drain Source Resistance | 7 mΩ |
| Maximum Drain Source Voltage | 100 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 150 W |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 72 nC @ 10 V |
| Width | 4.6mm |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Id - Continuous Drain Current: | 110 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 150 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | Power MOSFETs |
| Qg - Gate Charge: | 60 nC |
| Rds On - Drain-Source Resistance: | 7 mOhms |
| Series: | STP110N10F7 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 2.3 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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