VN10LP, N-Channel MOSFET, 270 mA, 60 V, 3-Pin E-Line Diodes Inc VN10LP
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см. техническую документацию
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110 руб.
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Описание Транзистор N-MOSFET, полевой, 60В, 0,27А, 0,625Вт, TO92 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 270 mA |
| Maximum Drain Source Resistance | 5 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 625 mW |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | E-Line |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 2.41mm |
| Brand: | Diodes Incorporated |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Forward Transconductance - Min: | 100 mS |
| Id - Continuous Drain Current: | 270 mA |
| Manufacturer: | Diodes Incorporated |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 625 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Rds On - Drain-Source Resistance: | 5 Ohms |
| Series: | VN10 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 10 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 0.27 |
| Maximum Drain Source Resistance (mOhm) | 5000@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Maximum IDSS (uA) | 10 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 625 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Process Technology | DMOS |
| Product Category | Small Signal |
| Standard Package Name | TO-92 |
| Supplier Package | E-Line |
| Supplier Temperature Grade | Automotive |
| Typical Input Capacitance @ Vds (pF) | 60(Max)@25V |
| Вес, г | 1 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
