ZVN4306A, Транзисторы

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360 руб.

Мин. кол-во для заказа 2 шт.

от 5 шт. — 290 руб.

от 10 шт. — 246 руб.

от 23 шт. — 221.40 руб.

Добавить в корзину 2 шт. на сумму 720 руб.

Номенклатурный номер: 8028761554

Артикул: ZVN4306A

Бренд: DIODES INC.

Описание Транзистор N-MOSFET, полевой, 60В, 1,1А, 850мВт, TO92 Характеристики

Brand:	Diodes Incorporated
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	4000
Fall Time:	16 ns
Forward Transconductance - Min:	700 mS
Id - Continuous Drain Current:	1.1 A
Manufacturer:	Diodes Incorporated
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-92-3
Packaging:	Bulk
Pd - Power Dissipation:	850 mW
Product Category:	MOSFET
Product Type:	MOSFET
Product:	MOSFET Small Signals
Rds On - Drain-Source Resistance:	450 mOhms
REACH - SVHC:	Details
Rise Time:	25 ns
Series:	ZVN4306
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	FET
Typical Turn-Off Delay Time:	30 ns
Typical Turn-On Delay Time:	8 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1.3 V
Case	TO92
Drain current	1.1A
Drain-source voltage	60V
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	bulk
Manufacturer	DIODES INCORPORATED
Mounting	THT
On-state resistance	0.45Ω
Polarisation	unipolar
Power dissipation	0.85W
Type of transistor	N-MOSFET
Вес, г	0.163

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