ZXT12N50DXTA, Bipolar Transistors - BJT Dual 50V NPN

Изображения служат только для ознакомления,
см. техническую документацию

460 руб.

от 10 шт. — 360 руб.

от 100 шт. — 261 руб.

от 500 шт. — 206.87 руб.

Добавить в корзину 1 шт. на сумму 460 руб.

Номенклатурный номер: 8004585581

Артикул: ZXT12N50DXTA

Бренд: DIODES INC.

Semiconductors\Discrete Semiconductors\Transistors\Bipolar Transistors - BJT

Массив биполярных (BJT) транзисторов 2 NPN (двойной) 50 В, 3 А, 132 МГц, 1,04 Вт, поверхностный монтаж 8-MSOP

Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	100 V
Collector- Emitter Voltage VCEO Max:	50 V
Collector-Emitter Saturation Voltage:	135 mV
Configuration:	Dual
Continuous Collector Current:	3 A
DC Current Gain hFE Max:	250 at 10 mA, 2 V
Emitter- Base Voltage VEBO:	7.5 V
Factory Pack Quantity: Factory Pack Quantity:	1000
Gain Bandwidth Product fT:	132 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	3 A
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	MSOP-8
Pd - Power Dissipation:	870 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	ZXT12
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	NPN
Base Product Number	ZXT12N50D ->
Current - Collector (Ic) (Max)	3A
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	300 @ 1A, 2V
ECCN	EAR99
Frequency - Transition	132MHz
HTSUS	8541.29.0075
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C (TJ)
Package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case	8-TSSOP, 8-MSOP (0.118"", 3.00mm Width)
Power - Max	1.04W
REACH Status	REACH Unaffected
RoHS Status	ROHS3 Compliant
Supplier Device Package	8-MSOP
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	250mV @ 50mA, 3A
Voltage - Collector Emitter Breakdown (Max)	50V
Вес, г	0.14

pdf, 261 КБ

Мы рекомендуем